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DMS2220LFDB-7

DMS2220LFDB-7 Diodes Incorporated


ds31546.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
auf Bestellung 87000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.24 EUR
9000+0.23 EUR
15000+0.22 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMS2220LFDB-7 Diodes Incorporated

Description: MOSFET P-CH 20V 3.5A 6-DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V.

Weitere Produktangebote DMS2220LFDB-7 nach Preis ab 0.22 EUR bis 0.90 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMS2220LFDB-7 DMS2220LFDB-7 Hersteller : Diodes Incorporated ds31546.pdf MOSFETs 20V 3.5A P-CHNL
auf Bestellung 4929 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.74 EUR
10+0.62 EUR
100+0.44 EUR
500+0.26 EUR
1000+0.22 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DMS2220LFDB-7 DMS2220LFDB-7 Hersteller : Diodes Incorporated ds31546.pdf Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
auf Bestellung 89997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.90 EUR
29+0.61 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
DMS2220LFDB-7 DMS2220LFDB-7 Hersteller : Diodes Incorporated ds31546.pdf Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
auf Bestellung 89297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.90 EUR
30+0.60 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
DMS2220LFDB-7 ds31546.pdf
auf Bestellung 150000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DMS2220LFDB-7 Hersteller : Diodes Inc dms2220lfdb.pdf Trans MOSFET P-CH 20V 3.5A 6-Pin DFN-B EP T/R
Produkt ist nicht verfügbar
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DMS2220LFDB-7 Hersteller : DIODES INCORPORATED ds31546.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1.4W
Case: U-DFN2020-6
Drain-source voltage: -20V
Drain current: -3.5A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -12A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMS2220LFDB-7 Hersteller : DIODES INCORPORATED ds31546.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1.4W
Case: U-DFN2020-6
Drain-source voltage: -20V
Drain current: -3.5A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -12A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH