
DMS2220LFDB-7 Diodes Incorporated

Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
auf Bestellung 87000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.26 EUR |
6000+ | 0.24 EUR |
9000+ | 0.23 EUR |
15000+ | 0.22 EUR |
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Technische Details DMS2220LFDB-7 Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A 6-DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V.
Weitere Produktangebote DMS2220LFDB-7 nach Preis ab 0.22 EUR bis 0.90 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMS2220LFDB-7 | Hersteller : Diodes Incorporated |
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auf Bestellung 4929 Stücke: Lieferzeit 10-14 Tag (e) |
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DMS2220LFDB-7 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V |
auf Bestellung 89997 Stücke: Lieferzeit 10-14 Tag (e) |
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DMS2220LFDB-7 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V |
auf Bestellung 89297 Stücke: Lieferzeit 10-14 Tag (e) |
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DMS2220LFDB-7 |
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auf Bestellung 150000 Stücke: Lieferzeit 21-28 Tag (e) |
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DMS2220LFDB-7 | Hersteller : Diodes Inc |
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Produkt ist nicht verfügbar |
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DMS2220LFDB-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1.4W Case: U-DFN2020-6 Drain-source voltage: -20V Drain current: -3.5A On-state resistance: 0.12Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -12A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMS2220LFDB-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1.4W Case: U-DFN2020-6 Drain-source voltage: -20V Drain current: -3.5A On-state resistance: 0.12Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -12A Mounting: SMD |
Produkt ist nicht verfügbar |