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DMS3015SSS-13

DMS3015SSS-13 Diodes Incorporated

DMS3015SSS.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.55W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1276 pF @ 15 V
auf Bestellung 67500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.23 EUR
5000+0.21 EUR
7500+0.20 EUR
Mindestbestellmenge: 2500
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Technische Details DMS3015SSS-13 Diodes Incorporated

Description: MOSFET N-CH 30V 11A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 1.55W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1276 pF @ 15 V.

Weitere Produktangebote DMS3015SSS-13 nach Preis ab 0.30 EUR bis 1.13 EUR

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DMS3015SSS-13 DMS3015SSS-13 Hersteller : Diodes Incorporated DMS3015SSS.pdf Description: MOSFET N-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.55W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1276 pF @ 15 V
auf Bestellung 68031 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
26+0.70 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.30 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
DMS3015SSS-13 Hersteller : Diodes Incorporated ds32096-88633.pdf MOSFET MOSFET N-CHAN
auf Bestellung 4915 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH