DMT10H009LCG-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.8 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT10H009LCG-7 Diodes Incorporated
Description: DIODES INC. - DMT10H009LCG-7 - Leistungs-MOSFET, n-Kanal, 100 V, 47 A, 0.0072 ohm, VDFN3333, Oberflächenmontage, tariffCode: 85411000, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 47A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.5V, euEccn: NLR, Verlustleistung: 1W, Bauform - Transistor: VDFN3333, Anzahl der Pins: 8Pins, Produktpalette: PW Series, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0072ohm, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote DMT10H009LCG-7 nach Preis ab 0.76 EUR bis 1.95 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMT10H009LCG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V 12.4A/47A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: V-DFN3333-8 (Type B) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V |
auf Bestellung 3142 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009LCG-7 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V |
auf Bestellung 1931 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009LCG-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMT10H009LCG-7 - Leistungs-MOSFET, n-Kanal, 100 V, 47 A, 0.0072 ohm, VDFN3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: VDFN3333 Anzahl der Pins: 8Pins Produktpalette: PW Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0072ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H009LCG-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMT10H009LCG-7 - Leistungs-MOSFET, n-Kanal, 100 V, 47 A, 0.0072 ohm, VDFN3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: VDFN3333 Anzahl der Pins: 8Pins Produktpalette: PW Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0072ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H009LCG-7 | Hersteller : Diodes Inc | Trans MOSFET N-CH 100V 12.4A 8-Pin VDFN EP T/R |
Produkt ist nicht verfügbar |
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DMT10H009LCG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; Idm: 160A; 2.1W Kind of package: reel; tape Drain-source voltage: 100V Drain current: 9.9A On-state resistance: 12.9mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 20.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A Mounting: SMD Case: V-DFN3333-8 Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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DMT10H009LCG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; Idm: 160A; 2.1W Kind of package: reel; tape Drain-source voltage: 100V Drain current: 9.9A On-state resistance: 12.9mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 20.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A Mounting: SMD Case: V-DFN3333-8 |
Produkt ist nicht verfügbar |