| Anzahl | Preis |
|---|---|
| 2+ | 2.39 EUR |
| 10+ | 1.67 EUR |
| 100+ | 1.23 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.89 EUR |
| 2000+ | 0.82 EUR |
| 4000+ | 0.77 EUR |
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Technische Details DMT10H009LCG-7 Diodes Incorporated
Description: MOSFET N-CH 100V 12.4A/47A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: V-DFN3333-8 (Type B), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMT10H009LCG-7 nach Preis ab 0.91 EUR bis 2.69 EUR
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DMT10H009LCG-7 | Diodes Incorporated |
 Description: MOSFET N-CH 100V 12.4A/47A 8DFNInput Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: V-DFN3333-8 (Type B) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 921 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT10H009LCG-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8 (Type B)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8 (Type B)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 921 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.69 EUR |
| 11+ | 1.71 EUR |
| 100+ | 1.15 EUR |
| 500+ | 0.91 EUR |