DMT10H009LH3 Diodes Incorporated

Description: MOSFET N-CH 100V 84A TO251, Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-251, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 96W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.