auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.02 EUR |
| 10+ | 1.41 EUR |
| 25+ | 1.38 EUR |
| 75+ | 1.17 EUR |
| 300+ | 1.02 EUR |
| 525+ | 1.00 EUR |
| 1050+ | 0.96 EUR |
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Technische Details DMT10H009LH3 Diodes Incorporated
Description: MOSFET N-CH 100V 84A TO251, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-251, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V.
Weitere Produktangebote DMT10H009LH3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMT10H009LH3 | Hersteller : Diodes Inc |
 Trans MOSFET N-CH 100V 84A 3-Pin(3+Tab) TO-251 Tube |
Produkt ist nicht verfügbar |
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DMT10H009LH3 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 84A 3-Pin(3+Tab) TO-251 Tube |
Produkt ist nicht verfügbar |
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| DMT10H009LH3 | Hersteller : DIODES INCORPORATED |
DMT10H009LH3 THT N channel transistors |
Produkt ist nicht verfügbar |
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| DMT10H009LH3 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V 84A TO251 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V |
Produkt ist nicht verfügbar |