DMT10H009LK3-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 1557500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.78 EUR |
| 5000+ | 0.75 EUR |
| 12500+ | 0.71 EUR |
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Technische Details DMT10H009LK3-13 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V.
Weitere Produktangebote DMT10H009LK3-13 nach Preis ab 0.77 EUR bis 1.9 EUR
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DMT10H009LK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V TO252 T&R Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V |
auf Bestellung 1559920 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009LK3-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V-100V TO252 T&R 2.5K |
auf Bestellung 19190 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009LK3-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMT10H009LK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 90 A, 0.0067 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.7W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0067ohm |
auf Bestellung 9068 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H009LK3-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMT10H009LK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 90 A, 0.0067 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.7W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0067ohm |
auf Bestellung 9068 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT10H009LK3-13 | Hersteller : Diodes Zetex |
N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
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| DMT10H009LK3-13 | Hersteller : Diodes Inc |
N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
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| DMT10H009LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 73A; Idm: 360A; 3W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 13mΩ Drain current: 73A Power dissipation: 3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT10H009LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 73A; Idm: 360A; 3W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 13mΩ Drain current: 73A Power dissipation: 3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A |
Produkt ist nicht verfügbar |