DMT10H009SPS-13 Diodes Zetex
auf Bestellung 282500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.54 EUR |
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Technische Details DMT10H009SPS-13 Diodes Zetex
Description: MOSFET N-CH 100V PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V.
Weitere Produktangebote DMT10H009SPS-13 nach Preis ab 0.82 EUR bis 2.23 EUR
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DMT10H009SPS-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 100V PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V |
auf Bestellung 275000 Stücke: Lieferzeit 21-28 Tag (e) |
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DMT10H009SPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V |
auf Bestellung 277026 Stücke: Lieferzeit 21-28 Tag (e) |
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DMT10H009SPS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS 61V-100V |
auf Bestellung 20362 Stücke: Lieferzeit 14-28 Tag (e) |
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DMT10H009SPS-13 транзистор Produktcode: 197183 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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DMT10H009SPS-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 100V 14A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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DMT10H009SPS-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 14A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMT10H009SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 320A; 2.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Pulsed drain current: 320A Power dissipation: 2.7W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT10H009SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 320A; 2.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Pulsed drain current: 320A Power dissipation: 2.7W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |