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Technische Details DMT10H009SSS-13 Diodes Zetex
Description: MOSFET BVDSS: 61V-100V SO-8 T&R, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.4W (Ta), Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 10 V.
Weitere Produktangebote DMT10H009SSS-13 nach Preis ab 0.8 EUR bis 0.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| DMT10H009SSS-13 | Diodes Incorporated |
 Description: MOSFET BVDSS: 61V-100V SO-8 T&RDrain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 10 V |
auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMT10H009SSS-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V-100V SO-8 T&R
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 10 V
Description: MOSFET BVDSS: 61V-100V SO-8 T&R
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 10 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.88 EUR |
| 5000+ | 0.83 EUR |
| 12500+ | 0.8 EUR |