DMT10H009SSS-13 Diodes Incorporated

Description: MOSFET BVDSS: 61V-100V SO-8 T&R, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.4W (Ta), Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 10 V.