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DMT10H010LPS-13

DMT10H010LPS-13 Diodes Incorporated

DMT10H010LPS.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 9.4A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.04 EUR
5000+ 0.99 EUR
12500+ 0.94 EUR
Mindestbestellmenge: 2500
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Technische Details DMT10H010LPS-13 Diodes Incorporated

Description: MOSFET N-CH 100V 9.4A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V, Power Dissipation (Max): 1.2W (Ta), 139W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V.

Weitere Produktangebote DMT10H010LPS-13 nach Preis ab 0.73 EUR bis 2.5 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMT10H010LPS-13 DMT10H010LPS-13 Hersteller : Diodes Zetex 982279560198656dmt10h010lps.pdf Trans MOSFET N-CH 100V 9.4A 8-Pin PowerDI EP T/R
auf Bestellung 6667 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
105+1.5 EUR
106+ 1.43 EUR
124+ 1.17 EUR
250+ 1.12 EUR
500+ 0.95 EUR
1000+ 0.76 EUR
3000+ 0.73 EUR
Mindestbestellmenge: 105
DMT10H010LPS-13 DMT10H010LPS-13 Hersteller : Diodes Zetex 982279560198656dmt10h010lps.pdf Trans MOSFET N-CH 100V 9.4A 8-Pin PowerDI EP T/R
auf Bestellung 6667 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
93+1.7 EUR
105+ 1.44 EUR
106+ 1.38 EUR
124+ 1.13 EUR
250+ 1.07 EUR
500+ 0.91 EUR
1000+ 0.73 EUR
Mindestbestellmenge: 93
DMT10H010LPS-13 DMT10H010LPS-13 Hersteller : Diodes Incorporated DMT10H010LPS-3214331.pdf MOSFET 100V N-Ch Enh FET Low Rdson
auf Bestellung 20077 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.5 EUR
10+ 2.04 EUR
100+ 1.6 EUR
500+ 1.36 EUR
1000+ 1.09 EUR
2500+ 1.08 EUR
Mindestbestellmenge: 2
DMT10H010LPS-13 DMT10H010LPS-13 Hersteller : Diodes Incorporated DMT10H010LPS.pdf Description: MOSFET N-CH 100V 9.4A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 16164 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.5 EUR
10+ 2.05 EUR
100+ 1.59 EUR
500+ 1.35 EUR
1000+ 1.1 EUR
Mindestbestellmenge: 8
DMT10H010LPS-13 DMT10H010LPS-13 Hersteller : Diodes Inc 982279560198656dmt10h010lps.pdf Trans MOSFET N-CH 100V 9.4A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H010LPS-13 DMT10H010LPS-13 Hersteller : Diodes Zetex 982279560198656dmt10h010lps.pdf Trans MOSFET N-CH 100V 9.4A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT10H010LPS-13 Hersteller : DIODES INCORPORATED DMT10H010LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 98A; 1.2W; PowerDI®5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 98A
Power dissipation: 1.2W
Case: PowerDI®5060-8
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT10H010LPS-13 Hersteller : DIODES INCORPORATED DMT10H010LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 98A; 1.2W; PowerDI®5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 98A
Power dissipation: 1.2W
Case: PowerDI®5060-8
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar