DMT10H010LSS-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 11.5A/29.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT10H010LSS-13 Diodes Incorporated
Description: MOSFET N-CH 100V 11.5A/29.5A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Power Dissipation (Max): 1.4W (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote DMT10H010LSS-13 nach Preis ab 0.92 EUR bis 2.66 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMT10H010LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 11.5A/29.5A 8SO Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.8V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 2599 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
DMT10H010LSS-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS |
auf Bestellung 4432 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMT10H010LSS-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 11.5A/29.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 11.5A/29.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2599 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.52 EUR |
| 10+ | 1.9 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1 EUR |
| DMT10H010LSS-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS
MOSFETs MOSFET BVDSS
auf Bestellung 4432 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.66 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.16 EUR |
| 1000+ | 1.06 EUR |
| 2500+ | 0.96 EUR |
| 5000+ | 0.92 EUR |