DMT10H010SPS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 113A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 1.94 EUR |
| 12+ | 1.58 EUR |
| 100+ | 1.23 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.85 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT10H010SPS-13 Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 113A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V.
Weitere Produktangebote DMT10H010SPS-13 nach Preis ab 0.83 EUR bis 1.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMT10H010SPS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V-100V |
auf Bestellung 2462 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
DMT10H010SPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 113A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
|||||||||||||||
 |
DMT10H010SPS-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 100V 10.7A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
| DMT10H010SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.6A; Idm: 250A; 1.2W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 11.5mΩ Drain current: 8.6A Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
| DMT10H010SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.6A; Idm: 250A; 1.2W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 11.5mΩ Drain current: 8.6A Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A |
Produkt ist nicht verfügbar |