DMT10H014LSS-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 8.9A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
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Technische Details DMT10H014LSS-13 Diodes Incorporated
Description: MOSFET N-CH 100V 8.9A 8SO, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote DMT10H014LSS-13 nach Preis ab 0.78 EUR bis 2.32 EUR
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DMT10H014LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 8.9A 8SO Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.2W (Ta) |
auf Bestellung 111690 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H014LSS-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V-100V |
auf Bestellung 2585 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT10H014LSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 8.9A 8SO
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Description: MOSFET N-CH 100V 8.9A 8SO
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
auf Bestellung 111690 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.18 EUR |
| 12+ | 1.53 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.83 EUR |
| DMT10H014LSS-13 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 61V-100V
MOSFETs MOSFET BVDSS: 61V-100V
auf Bestellung 2585 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.32 EUR |
| 10+ | 1.63 EUR |
| 100+ | 1.24 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.87 EUR |
| 2500+ | 0.78 EUR |