DMT10H015LFG-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.64 EUR |
| 4000+ | 0.6 EUR |
| 6000+ | 0.59 EUR |
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Technische Details DMT10H015LFG-7 Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333, Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 35W (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMT10H015LFG-7 nach Preis ab 0.62 EUR bis 0.84 EUR
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DMT10H015LFG-7 | Diodes Incorporated |
MOSFETs 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W |
auf Bestellung 6993 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI3333 Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 2W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 108296 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMT10H015LFG-7 |
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Hersteller: Diodes Incorporated
MOSFETs 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
MOSFETs 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
auf Bestellung 6993 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.83 EUR |
| 10+ | 0.82 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.72 EUR |
| 1000+ | 0.69 EUR |
| 2000+ | 0.63 EUR |
| 4000+ | 0.62 EUR |
| DMT10H015LFG-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 108296 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.84 EUR |
| 22+ | 0.83 EUR |
| 100+ | 0.74 EUR |