DMT10H015LFG-7 Diodes Zetex
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.57 EUR |
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Technische Details DMT10H015LFG-7 Diodes Zetex
Description: MOSFET N-CH 100V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V, Power Dissipation (Max): 2W (Ta), 35W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V.
Weitere Produktangebote DMT10H015LFG-7 nach Preis ab 0.48 EUR bis 1.26 EUR
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DMT10H015LFG-7 | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R |
auf Bestellung 1271 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H015LFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
auf Bestellung 32000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LFG-7 | Hersteller : Diodes Incorporated |
MOSFETs 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W |
auf Bestellung 6993 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
auf Bestellung 32626 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LFG-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R |
auf Bestellung 1271 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H015LFG-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H015LFG-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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DMT10H015LFG-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMT10H015LFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Case: PowerDI3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 100V Gate charge: 33.3nC On-state resistance: 23.5mΩ Power dissipation: 2W Drain current: 8A Pulsed drain current: 75A Gate-source voltage: ±20V Kind of channel: enhancement Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMT10H015LFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Case: PowerDI3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 100V Gate charge: 33.3nC On-state resistance: 23.5mΩ Power dissipation: 2W Drain current: 8A Pulsed drain current: 75A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |