DMT10H015LK3-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 100V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 2500+ | 0.72 EUR |
| 5000+ | 0.71 EUR |
| 7500+ | 0.7 EUR |
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Technische Details DMT10H015LK3-13 Diodes Incorporated
Description: MOSFET N-CHANNEL 100V 50A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Power Dissipation (Max): 2.9W (Ta), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-252-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote DMT10H015LK3-13 nach Preis ab 0.74 EUR bis 2.71 EUR
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DMT10H015LK3-13 | Diodes Incorporated |
Description: MOSFET N-CHANNEL 100V 50A TO252 Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 2.9W (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 15754 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LK3-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V-100V |
auf Bestellung 4140 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT10H015LK3-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 100V 50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.9W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CHANNEL 100V 50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.9W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 15754 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.87 EUR |
| 12+ | 1.52 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.82 EUR |
| DMT10H015LK3-13 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 61V-100V
MOSFETs MOSFET BVDSS: 61V-100V
auf Bestellung 4140 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.71 EUR |
| 10+ | 1.62 EUR |
| 100+ | 1.12 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.84 EUR |
| 2500+ | 0.76 EUR |
| 5000+ | 0.74 EUR |