DMT10H015LPS-13 Diodes Zetex
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 102+ | 1.53 EUR |
| 103+ | 1.46 EUR |
| 134+ | 1.09 EUR |
| 250+ | 1.04 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.62 EUR |
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Produktbewertung abgeben
Technische Details DMT10H015LPS-13 Diodes Zetex
Description: MOSFET N-CH 100V 7.3A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V, Power Dissipation (Max): 1.3W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V.
Weitere Produktangebote DMT10H015LPS-13 nach Preis ab 0.59 EUR bis 2.56 EUR
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DMT10H015LPS-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 100V 7.3A PWRDI5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
auf Bestellung 1342 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LPS-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 7.3A 8-Pin PowerDI 5060 T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H015LPS-13 | Hersteller : Diodes Incorporated |
MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W |
auf Bestellung 2490 Stücke: Lieferzeit 14-28 Tag (e) |
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DMT10H015LPS-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 100V 7.3A 8-Pin PowerDI 5060 T/R |
Produkt ist nicht verfügbar |
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| DMT10H015LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 150A; 2.4W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 25mΩ Drain current: 8A Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMT10H015LPS-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 7.3A 8-Pin PowerDI 5060 T/R |
Produkt ist nicht verfügbar |
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DMT10H015LPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V 7.3A PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
Produkt ist nicht verfügbar |
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| DMT10H015LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 150A; 2.4W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 25mΩ Drain current: 8A Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A |
Produkt ist nicht verfügbar |