DMT10H015SK3-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 100V 54A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
auf Bestellung 122500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.66 EUR |
| 5000+ | 0.63 EUR |
| 12500+ | 0.6 EUR |
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Technische Details DMT10H015SK3-13 Diodes Incorporated
Description: MOSFET N-CH 100V 54A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V, Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V.
Weitere Produktangebote DMT10H015SK3-13 nach Preis ab 0.56 EUR bis 1.13 EUR
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DMT10H015SK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 215A; 2.9W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 11.1mΩ Drain current: 43A Power dissipation: 2.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30.1nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 215A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1101 Stücke: Lieferzeit 7-14 Tag (e) |
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DMT10H015SK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 215A; 2.9W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 11.1mΩ Drain current: 43A Power dissipation: 2.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30.1nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 215A |
auf Bestellung 1101 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 125000 Stücke: Lieferzeit 14-21 Tag (e) |
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