Technische Details DMT10H015SPS-13 Diodes Zetex
Description: MOSFET N-CH 100V PWRDI5060, Part Status: Active, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.3W (Ta), 46W (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Weitere Produktangebote DMT10H015SPS-13 nach Preis ab 0.58 EUR bis 0.67 EUR
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DMT10H015SPS-13 | Diodes Incorporated |
 Description: MOSFET N-CH 100V PWRDI5060Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.3W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT10H015SPS-13 | Diodes Zetex |
100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT10H015SPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 100V PWRDI5060
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.67 EUR |
| 5000+ | 0.64 EUR |
| DMT10H015SPS-13 |
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Hersteller: Diodes Zetex
100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.58 EUR |