DMT10H015SPS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.6 EUR |
| 5000+ | 0.57 EUR |
| 12500+ | 0.55 EUR |
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Technische Details DMT10H015SPS-13 Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V, Power Dissipation (Max): 1.3W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V.
Weitere Produktangebote DMT10H015SPS-13 nach Preis ab 0.53 EUR bis 0.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| DMT10H015SPS-13 | Hersteller : Diodes Zetex |
100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT10H015SPS-13 | Hersteller : Diodes Zetex |
100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 |
Produkt ist nicht verfügbar |
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| DMT10H015SPS-13 | Hersteller : Diodes Inc |
100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 |
Produkt ist nicht verfügbar |
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| DMT10H015SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.1A; Idm: 120A; 1.3W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 19.5mΩ Drain current: 6.1A Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30.1nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMT10H015SPS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V-100V |
Produkt ist nicht verfügbar |
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| DMT10H015SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.1A; Idm: 120A; 1.3W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 19.5mΩ Drain current: 6.1A Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30.1nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A |
Produkt ist nicht verfügbar |