DMT10H017LPD-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 100V 54.7A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Ta), 78W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 57500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.11 EUR |
| 5000+ | 1.06 EUR |
| 12500+ | 1.01 EUR |
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Technische Details DMT10H017LPD-13 Diodes Incorporated
Description: MOSFET 2N-CH 100V 54.7A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W (Ta), 78W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V, Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMT10H017LPD-13 nach Preis ab 1.06 EUR bis 2.69 EUR
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DMT10H017LPD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 100V 54.7A PWRDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W (Ta), 78W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 59975 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H017LPD-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V-100V PowerDI5060-8 T&R 2.5K |
auf Bestellung 2285 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H017LPD-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 100V 54.7A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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DMT10H017LPD-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 54.7A 8-Pin PowerDI EP T/R |
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| DMT10H017LPD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43.7A; Idm: 60A; 2.2W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 30.3mΩ Drain current: 43.7A Power dissipation: 2.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28.6nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT10H017LPD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43.7A; Idm: 60A; 2.2W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 30.3mΩ Drain current: 43.7A Power dissipation: 2.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28.6nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A |
Produkt ist nicht verfügbar |