DMT10H025SSS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 100V 7.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.38 EUR |
| 5000+ | 0.36 EUR |
| 12500+ | 0.33 EUR |
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Technische Details DMT10H025SSS-13 Diodes Incorporated
Description: MOSFET N-CH 100V 7.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V.
Weitere Produktangebote DMT10H025SSS-13 nach Preis ab 0.38 EUR bis 1.02 EUR
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DMT10H025SSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V 7.4A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V |
auf Bestellung 13660 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H025SSS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V-100V |
auf Bestellung 7400 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H025SSS-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 7.4A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMT10H025SSS-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 100V 7.4A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMT10H025SSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.9A; Idm: 45A; 1.9W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 30mΩ Drain current: 5.9A Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 45A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMT10H025SSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.9A; Idm: 45A; 1.9W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 30mΩ Drain current: 5.9A Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 45A |
Produkt ist nicht verfügbar |