DMT10H072LDV-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 100V 12A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 228pF @ 50V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.57 EUR |
| 4000+ | 0.53 EUR |
| 6000+ | 0.51 EUR |
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Technische Details DMT10H072LDV-7 Diodes Incorporated
Description: MOSFET 2N-CH 100V 12A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 228pF @ 50V, Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXC).
Weitere Produktangebote DMT10H072LDV-7 nach Preis ab 0.47 EUR bis 1.36 EUR
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| DMT10H072LDV-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V~100V PowerDI3333-8 T&R 2K |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT10H072LDV-7 | Hersteller : Diodes Zetex |
N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |