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DMT10H072LFDFQ-7

DMT10H072LFDFQ-7 Diodes Incorporated

DMT10H072LFDFQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.30 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMT10H072LFDFQ-7 Diodes Incorporated

Description: MOSFET N-CH 100V 4A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMT10H072LFDFQ-7 nach Preis ab 0.30 EUR bis 1.25 EUR

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DMT10H072LFDFQ-7 DMT10H072LFDFQ-7 Hersteller : Diodes Incorporated diod_s_a0009189299_1-2265471.pdf MOSFETs MOSFET BVDSS: 61V~100V U-DFN2020-6 T&R 3K
auf Bestellung 11725 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.10 EUR
10+0.82 EUR
100+0.59 EUR
500+0.47 EUR
1000+0.38 EUR
3000+0.31 EUR
6000+0.30 EUR
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DMT10H072LFDFQ-7 DMT10H072LFDFQ-7 Hersteller : Diodes Incorporated DMT10H072LFDFQ.pdf Description: MOSFET N-CH 100V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 23496 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
19+0.94 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.42 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
DMT10H072LFDFQ-7 DMT10H072LFDFQ-7 Hersteller : Diodes Zetex dmt10h072lfdfq.pdf Trans MOSFET N-CH 100V 4A 6-Pin UDFN EP T/R Automotive AEC-Q101
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DMT10H072LFDFQ-7 Hersteller : Diodes Inc dmt10h072lfdfq.pdf 100V N-Channel Enhancement Mode MOSFET
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DMT10H072LFDFQ-7 Hersteller : DIODES INCORPORATED DMT10H072LFDFQ.pdf DMT10H072LFDFQ-7 SMD N channel transistors
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