Technische Details DMT10H072LFV-13 Diodes Zetex
Description: MOSFET N-CH 100V PWRDI3333, Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PowerDI3333-8 (Type UX), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMT10H072LFV-13 nach Preis ab 0.37 EUR bis 0.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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DMT10H072LFV-13 | Diodes Incorporated |
 Description: MOSFET N-CH 100V PWRDI3333Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PowerDI3333-8 (Type UX) Vgs(th) (Max) @ Id: 2.8V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT10H072LFV-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PowerDI3333-8 (Type UX)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PowerDI3333-8 (Type UX)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.4 EUR |
| 6000+ | 0.37 EUR |