DMT10H4M5LPS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 61V-100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.56 EUR |
| 5000+ | 1.51 EUR |
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Technische Details DMT10H4M5LPS-13 Diodes Incorporated
Description: MOSFET BVDSS: 61V-100V POWERDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V, Power Dissipation (Max): 2.3W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V.
Weitere Produktangebote DMT10H4M5LPS-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMT10H4M5LPS-13 | Hersteller : Diodes Inc |
MOSFET BVDSS: 61V100V PowerDI5060-8 T&R 2.5K |
Produkt ist nicht verfügbar |
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| DMT10H4M5LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 6.2mΩ Drain current: 15A Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 80nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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 |
DMT10H4M5LPS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V-100V PowerDI5060-8 T&R 2.5K |
Produkt ist nicht verfügbar |
|
| DMT10H4M5LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 6.2mΩ Drain current: 15A Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 80nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A |
Produkt ist nicht verfügbar |