Produkte > DIODES INCORPORATED > DMT12H060LFDF-7
DMT12H060LFDF-7

DMT12H060LFDF-7 Diodes Incorporated

DMT12H060LFDF.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 101V~250V U-DFN202
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 115 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 50 V
auf Bestellung 2466000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.39 EUR
6000+0.36 EUR
9000+0.35 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMT12H060LFDF-7 Diodes Incorporated

Description: MOSFET BVDSS: 101V~250V U-DFN202, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 115 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 50 V.

Weitere Produktangebote DMT12H060LFDF-7 nach Preis ab 0.35 EUR bis 1.62 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMT12H060LFDF-7 DMT12H060LFDF-7 Hersteller : Diodes Incorporated DMT12H060LFDF.pdf Description: MOSFET BVDSS: 101V~250V U-DFN202
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 115 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 50 V
auf Bestellung 2467060 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
18+1 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.45 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
DMT12H060LFDF-7 Hersteller : Diodes Incorporated DMT12H060LFDF-3043349.pdf MOSFET MOSFET BVDSS: 101V-250V U-DFN2020-6 T&R 3K
auf Bestellung 3425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+0.98 EUR
10+0.86 EUR
100+0.59 EUR
500+0.49 EUR
1000+0.43 EUR
3000+0.36 EUR
6000+0.35 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DMT12H060LFDF-7 Hersteller : DIODES INCORPORATED DMT12H060LFDF.pdf DMT12H060LFDF-7 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH