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DMT12H065LFDF-7

DMT12H065LFDF-7 Diodes Incorporated

DMT12H065LFDF.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 115V 4.3A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 115 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 50 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.58 EUR
6000+ 0.55 EUR
9000+ 0.51 EUR
Mindestbestellmenge: 3000
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Technische Details DMT12H065LFDF-7 Diodes Incorporated

Description: MOSFET N-CH 115V 4.3A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 115 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 50 V.

Weitere Produktangebote DMT12H065LFDF-7 nach Preis ab 0.62 EUR bis 1.62 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMT12H065LFDF-7 DMT12H065LFDF-7 Hersteller : Diodes Incorporated DMT12H065LFDF.pdf Description: MOSFET N-CH 115V 4.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 115 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 50 V
auf Bestellung 39259 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.53 EUR
14+ 1.33 EUR
100+ 0.92 EUR
500+ 0.77 EUR
1000+ 0.65 EUR
Mindestbestellmenge: 12
DMT12H065LFDF-7 DMT12H065LFDF-7 Hersteller : Diodes Incorporated DIOD_S_A0009150461_1-2543132.pdf MOSFET MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 3K
auf Bestellung 1005 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.62 EUR
10+ 1.42 EUR
100+ 1.09 EUR
500+ 0.87 EUR
1000+ 0.69 EUR
3000+ 0.62 EUR
Mindestbestellmenge: 2
DMT12H065LFDF-7 Hersteller : DIODES INCORPORATED DMT12H065LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMT12H065LFDF-7 Hersteller : DIODES INCORPORATED DMT12H065LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar