Technische Details DMT15H017LPSW-13 Diodes Inc
Description: MOSFET BVDSS: 101V~250V POWERDI5, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 58A (Tc), Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V, Power Dissipation (Max): 1.3W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V.
Weitere Produktangebote DMT15H017LPSW-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMT15H017LPSW-13 | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 7.5A; Idm: 230A; 2.3W Mounting: SMD Gate charge: 50nC Drain-source voltage: 150V Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 230A Kind of package: 13 inch reel; tape Case: PowerDI5060-8 Polarisation: unipolar Power dissipation: 2.3W Type of transistor: N-MOSFET On-state resistance: 25.5mΩ Drain current: 7.5A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMT15H017LPSW-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 101V~250V POWERDI5 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V |
Produkt ist nicht verfügbar |
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| DMT15H017LPSW-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 101V~250V PowerDI5060-8 T&R 2.5K |
Produkt ist nicht verfügbar |
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| DMT15H017LPSW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 7.5A; Idm: 230A; 2.3W Mounting: SMD Gate charge: 50nC Drain-source voltage: 150V Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 230A Kind of package: 13 inch reel; tape Case: PowerDI5060-8 Polarisation: unipolar Power dissipation: 2.3W Type of transistor: N-MOSFET On-state resistance: 25.5mΩ Drain current: 7.5A |
Produkt ist nicht verfügbar |