DMT15H053SSS-13 Diodes Incorporated
auf Bestellung 1356 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.95 EUR |
| 10+ | 1.32 EUR |
| 100+ | 1.00 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.69 EUR |
| 2500+ | 0.63 EUR |
| 5000+ | 0.61 EUR |
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Technische Details DMT15H053SSS-13 Diodes Incorporated
Description: MOSFET N-CH 150V 5.2A/15A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 15A (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 4.1A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V.
Weitere Produktangebote DMT15H053SSS-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMT15H053SSS-13 | Hersteller : Diodes Inc |
 N-Channel Enhancement Mode MOSFET |
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DMT15H053SSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 150V 5.2A/15A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 4.1A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V |
Produkt ist nicht verfügbar |