Produkte > DIODES INCORPORATED > DMT2004UFG-13
DMT2004UFG-13

DMT2004UFG-13 Diodes Incorporated


DMT2004UFG.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 24V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details DMT2004UFG-13 Diodes Incorporated

Description: MOSFET N-CH 24V 70A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V, Power Dissipation (Max): 2.3W (Ta), Vgs(th) (Max) @ Id: 1.45V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 24 V, Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMT2004UFG-13

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMT2004UFG-13 DMT2004UFG-13 Hersteller : Diodes Incorporated DMT2004UFG.pdf MOSFET MOSFET BVDSS: 8V-24V
Produkt ist nicht verfügbar