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DMT2004UFV-7

DMT2004UFV-7 Diodes Incorporated

DMT2004UFV.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 24V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.34 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMT2004UFV-7 Diodes Incorporated

Description: MOSFET N-CH 24V 70A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1.45V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 24 V, Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V.

Weitere Produktangebote DMT2004UFV-7 nach Preis ab 0.31 EUR bis 1.39 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMT2004UFV-7 DMT2004UFV-7 Hersteller : Diodes Incorporated DMT2004UFV.pdf MOSFETs MOSFET BVDSS: 8V-24V
auf Bestellung 3160 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.38 EUR
10+0.86 EUR
100+0.58 EUR
500+0.43 EUR
1000+0.39 EUR
2000+0.34 EUR
4000+0.31 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DMT2004UFV-7 DMT2004UFV-7 Hersteller : Diodes Incorporated DMT2004UFV.pdf Description: MOSFET N-CH 24V 70A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
21+0.86 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
DMT2004UFV-7 Hersteller : DIODES INCORPORATED DMT2004UFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Mounting: SMD
Drain-source voltage: 24V
Pulsed drain current: 90A
Drain current: 55A
Gate charge: 53.7nC
On-state resistance: 10mΩ
Power dissipation: 2.3W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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