auf Bestellung 2990 Stücke:
Lieferzeit 363-367 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.12 EUR |
| 10+ | 0.96 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.44 EUR |
| 3000+ | 0.38 EUR |
| 6000+ | 0.36 EUR |
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Technische Details DMT2005UDV-13 Diodes Incorporated
Description: MOSFET 2N-CH 24V 50A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW (Ta), Drain to Source Voltage (Vdss): 24V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V, Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V, Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXC).
Weitere Produktangebote DMT2005UDV-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMT2005UDV-13 | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 24V; 40A; Idm: 70A; 1.9W Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 46.7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 70A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 24V Drain current: 40A On-state resistance: 12mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMT2005UDV-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 24V 50A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) |
Produkt ist nicht verfügbar |
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| DMT2005UDV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 40A; Idm: 70A; 1.9W Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 46.7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 70A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 24V Drain current: 40A On-state resistance: 12mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |