Technische Details DMT2005UDV-13 Diodes Inc
Description: MOSFET 2N-CH 24V 50A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW (Ta), Drain to Source Voltage (Vdss): 24V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V, Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V, Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXC).
Weitere Produktangebote DMT2005UDV-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMT2005UDV-13 | Hersteller : DIODES INCORPORATED |
 DMT2005UDV-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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DMT2005UDV-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 24V 50A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) |
Produkt ist nicht verfügbar |
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DMT2005UDV-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V |
Produkt ist nicht verfügbar |