DMT3006LDV-13 DIODES INCORPORATED
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.35 EUR |
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Technische Details DMT3006LDV-13 DIODES INCORPORATED
Description: MOSFET 2N-CH 30V 25A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V, Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXC).
Weitere Produktangebote DMT3006LDV-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMT3006LDV-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 30V 25A PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) |
Produkt ist nicht verfügbar |
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DMT3006LDV-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V |
Produkt ist nicht verfügbar |