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DMT3006LDV-13 DIODES INCORPORATED


DMT3006LDV.pdf Hersteller: DIODES INCORPORATED
Category: Transistors - Unclassified
Description: DMT3006LDV-13
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Technische Details DMT3006LDV-13 DIODES INCORPORATED

Description: MOSFET 2N-CH 30V 25A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V, Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXC).

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DMT3006LDV-13 DMT3006LDV-13 Hersteller : Diodes Incorporated DMT3006LDV.pdf Description: MOSFET 2N-CH 30V 25A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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DMT3006LDV-13 DMT3006LDV-13 Hersteller : Diodes Incorporated DIOD_S_A0005045526_1-2542628.pdf MOSFETs MOSFET BVDSS: 25V-30V
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