Produkte > DIODES INCORPORATED > DMT3006LFDF-13

DMT3006LFDF-13 Diodes Incorporated


DMT3006LFDF.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 14.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10000+0.24 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMT3006LFDF-13 Diodes Incorporated

Description: MOSFET N-CH 30V 14.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V, Qualification: AEC-Q101.

Weitere Produktangebote DMT3006LFDF-13 nach Preis ab 0.27 EUR bis 1.2 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMT3006LFDF-13 DMT3006LFDF-13 Diodes Incorporated DMT3006LFDF.pdf Description: MOSFET N-CH 30V 14.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.2 EUR
24+0.74 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.33 EUR
2000+0.3 EUR
5000+0.27 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3006LFDF-13 DMT3006LFDF.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 14.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
15+1.2 EUR
24+0.74 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.33 EUR
2000+0.3 EUR
5000+0.27 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH