Technische Details DMT3006LFVQ-13 Diodes Inc
Description: MOSFET N-CH 30V 60A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote DMT3006LFVQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMT3006LFVQ-13 | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Drain-source voltage: 30V Drain current: 45A On-state resistance: 11mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 16.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD Case: PowerDI3333-8 Anzahl je Verpackung: 3000 Stücke |
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DMT3006LFVQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 60A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DMT3006LFVQ-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V |
Produkt ist nicht verfügbar |
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| DMT3006LFVQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Drain-source voltage: 30V Drain current: 45A On-state resistance: 11mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 16.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD Case: PowerDI3333-8 |
Produkt ist nicht verfügbar |