auf Bestellung 818 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.68 EUR |
| 10+ | 1.04 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.47 EUR |
| 2500+ | 0.39 EUR |
| 5000+ | 0.38 EUR |
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Technische Details DMT3006LPB-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W, Case: PowerDI5060-8, Mounting: SMD, Polarisation: unipolar, Gate-source voltage: ±20V, Gate charge: 12.6nC, On-state resistance: 14mΩ, Power dissipation: 1.7W, Drain current: 9/11A, Drain-source voltage: 30V, Pulsed drain current: 80...100A, Kind of package: 13 inch reel; tape, Kind of channel: enhancement, Type of transistor: N-MOSFET, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote DMT3006LPB-13 nach Preis ab 0.4 EUR bis 0.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
| DMT3006LPB-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 11A POWERDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc), 14A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11.5A, 10V, 6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type S) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3006LPB-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W Case: PowerDI5060-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 12.6nC On-state resistance: 14mΩ Power dissipation: 1.7W Drain current: 9/11A Drain-source voltage: 30V Pulsed drain current: 80...100A Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT3006LPB-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W Case: PowerDI5060-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 12.6nC On-state resistance: 14mΩ Power dissipation: 1.7W Drain current: 9/11A Drain-source voltage: 30V Pulsed drain current: 80...100A Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |