auf Bestellung 818 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.39 EUR |
| 10+ | 0.97 EUR |
| 100+ | 0.66 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.47 EUR |
| 2500+ | 0.42 EUR |
| 5000+ | 0.4 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT3006LPB-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W, Drain-source voltage: 30V, Drain current: 9/11A, On-state resistance: 14mΩ, Type of transistor: N-MOSFET, Power dissipation: 1.7W, Polarisation: unipolar, Kind of package: 13 inch reel; tape, Gate charge: 12.6nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 80...100A, Mounting: SMD, Case: PowerDI5060-8, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote DMT3006LPB-13 nach Preis ab 0.4 EUR bis 0.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
| DMT3006LPB-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 11A POWERDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc), 14A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11.5A, 10V, 6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type S) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||
| DMT3006LPB-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W Drain-source voltage: 30V Drain current: 9/11A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 12.6nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80...100A Mounting: SMD Case: PowerDI5060-8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||
| DMT3006LPB-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W Drain-source voltage: 30V Drain current: 9/11A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 12.6nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80...100A Mounting: SMD Case: PowerDI5060-8 |
Produkt ist nicht verfügbar |