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DMT3009LDT-7

DMT3009LDT-7 Diodes Incorporated


DMT3009LDT.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 30A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Part Status: Active
auf Bestellung 1783 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.11 EUR
14+1.34 EUR
100+0.91 EUR
500+0.71 EUR
1000+0.65 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMT3009LDT-7 Diodes Incorporated

Description: MOSFET 2N-CH 30V 30A 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 30A, Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V, Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN3030-8 (Type K), Part Status: Active.

Weitere Produktangebote DMT3009LDT-7 nach Preis ab 0.58 EUR bis 2.20 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMT3009LDT-7 DMT3009LDT-7 Hersteller : Diodes Incorporated DMT3009LDT.pdf MOSFETs MOSFET BVDSS
auf Bestellung 1420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.20 EUR
10+1.42 EUR
100+0.96 EUR
500+0.76 EUR
1000+0.69 EUR
3000+0.61 EUR
6000+0.58 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DMT3009LDT-7 DMT3009LDT-7 Hersteller : Diodes Inc dmt3009ldt.pdf Trans MOSFET N-CH 30V 30A 8-Pin VDFN T/R
Produkt ist nicht verfügbar
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DMT3009LDT-7 DMT3009LDT-7 Hersteller : Diodes Zetex dmt3009ldt.pdf Trans MOSFET N-CH 30V 30A 8-Pin VDFN T/R
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DMT3009LDT-7 Hersteller : DIODES INCORPORATED DMT3009LDT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 20nC
Kind of channel: enhancement
Gate-source voltage: -16...20V
Pulsed drain current: 80A
Mounting: SMD
Case: V-DFN3030-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT3009LDT-7 DMT3009LDT-7 Hersteller : Diodes Incorporated DMT3009LDT.pdf Description: MOSFET 2N-CH 30V 30A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT3009LDT-7 Hersteller : DIODES INCORPORATED DMT3009LDT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 20nC
Kind of channel: enhancement
Gate-source voltage: -16...20V
Pulsed drain current: 80A
Mounting: SMD
Case: V-DFN3030-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH