DMT3009UDT-7 DIODES INC.
Hersteller: DIODES INC.
Description: DIODES INC. - DMT3009UDT-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10.6 A, 10.6 A, 0.0111 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 10.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 10.6A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 1.1W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: V-DFN3030
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0111ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.1W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (27-Jun-2024)
| Anzahl | Privatkunde |
|---|---|
| 131+ | 1.92 EUR |
| 212+ | 1.09 EUR |
| 274+ | 0.79 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.54 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT3009UDT-7 DIODES INC.
Description: DIODES INC. - DMT3009UDT-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10.6 A, 10.6 A, 8600 µohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 10.6A, Dauer-Drainstrom Id, p-Kanal: 10.6A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: -, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 10.6A, Drain-Source-Durchgangswiderstand, p-Kanal: 8600µohm, Verlustleistung, p-Kanal: 1.1W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: V-DFN3030, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 8600µohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 1.1W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (27-Jun-2024).
Weitere Produktangebote DMT3009UDT-7 nach Preis ab 0.46 EUR bis 2.57 EUR
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DMT3009UDT-7 | DIODES INC. |
Description: DIODES INC. - DMT3009UDT-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10.6 A, 10.6 A, 8600 µohm tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 10.6A Dauer-Drainstrom Id, p-Kanal: 10.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 10.6A Drain-Source-Durchgangswiderstand, p-Kanal: 8600µohm Verlustleistung, p-Kanal: 1.1W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: V-DFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 8600µohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 1489 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3009UDT-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 10.6A 8VDFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta), 16W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 894pF @ 15V Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: V-DFN3030-8 (Type KS) Part Status: Active |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3009UDT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 30V; 10.6A; V-DFN3030-8; common source Type of transistor: N-MOSFET Drain-source voltage: 30V Drain current: 10.6A Case: V-DFN3030-8 Mounting: SMD Gate charge: 14.6nC Kind of channel: enhancement Semiconductor structure: common source |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT3009UDT-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V~30V V-DFN3030-8 T&R 1.5K |
auf Bestellung 1442 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3009UDT-7 |
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Hersteller: DIODES INC.
Description: DIODES INC. - DMT3009UDT-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10.6 A, 10.6 A, 8600 µohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 10.6A
Dauer-Drainstrom Id, p-Kanal: 10.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 10.6A
Drain-Source-Durchgangswiderstand, p-Kanal: 8600µohm
Verlustleistung, p-Kanal: 1.1W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: V-DFN3030
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 8600µohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.1W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (27-Jun-2024)
Description: DIODES INC. - DMT3009UDT-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10.6 A, 10.6 A, 8600 µohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 10.6A
Dauer-Drainstrom Id, p-Kanal: 10.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 10.6A
Drain-Source-Durchgangswiderstand, p-Kanal: 8600µohm
Verlustleistung, p-Kanal: 1.1W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: V-DFN3030
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 8600µohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.1W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 1489 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 131+ | 1.92 EUR |
| 212+ | 1.09 EUR |
| 274+ | 0.79 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.54 EUR |
| DMT3009UDT-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10.6A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta), 16W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 894pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type KS)
Part Status: Active
Description: MOSFET 2N-CH 30V 10.6A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta), 16W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 894pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type KS)
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.57 EUR |
| 3000+ | 0.52 EUR |
| 4500+ | 0.5 EUR |
| 7500+ | 0.46 EUR |
| DMT3009UDT-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 10.6A; V-DFN3030-8; common source
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 10.6A
Case: V-DFN3030-8
Mounting: SMD
Gate charge: 14.6nC
Kind of channel: enhancement
Semiconductor structure: common source
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 10.6A; V-DFN3030-8; common source
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 10.6A
Case: V-DFN3030-8
Mounting: SMD
Gate charge: 14.6nC
Kind of channel: enhancement
Semiconductor structure: common source
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.57 EUR |
| DMT3009UDT-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V~30V V-DFN3030-8 T&R 1.5K
MOSFETs MOSFET BVDSS: 25V~30V V-DFN3030-8 T&R 1.5K
auf Bestellung 1442 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.57 EUR |
| 10+ | 1.59 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.7 EUR |
| 1500+ | 0.64 EUR |