DMT3009UDT-7 Diodes Incorporated

Description: MOSFET 2N-CH 30V 10.6A 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W (Ta), 16W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 894pF @ 15V, Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: V-DFN3030-8 (Type KS), Part Status: Active.