DMT3020LDV-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 32A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Part Status: Active
| Anzahl | Preis |
|---|---|
| 2000+ | 0.31 EUR |
| 4000+ | 0.28 EUR |
| 6000+ | 0.27 EUR |
| 10000+ | 0.25 EUR |
| 14000+ | 0.24 EUR |
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Technische Details DMT3020LDV-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 32A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXC), Part Status: Active.
Weitere Produktangebote DMT3020LDV-7 nach Preis ab 0.3 EUR bis 1.35 EUR
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DMT3020LDV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 32A PWRDI3333 Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: PowerDI3333-8 (Type UXC) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 900mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) |
auf Bestellung 138116 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LDV-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 2K |
auf Bestellung 908 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LDV-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 32A PWRDI3333
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerDI3333-8 (Type UXC)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Description: MOSFET 2N-CH 30V 32A PWRDI3333
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerDI3333-8 (Type UXC)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
auf Bestellung 138116 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.27 EUR |
| 23+ | 0.79 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| DMT3020LDV-7 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 2K
MOSFETs MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 2K
auf Bestellung 908 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.35 EUR |
| 10+ | 0.84 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.42 EUR |
| 2000+ | 0.34 EUR |
| 4000+ | 0.3 EUR |