DMT3020LDV-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 30V 32A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Part Status: Active
auf Bestellung 44000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.3 EUR |
| 6000+ | 0.28 EUR |
| 10000+ | 0.26 EUR |
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Technische Details DMT3020LDV-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 32A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXC), Part Status: Active.
Weitere Produktangebote DMT3020LDV-7 nach Preis ab 0.27 EUR bis 0.9 EUR
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DMT3020LDV-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 32A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) Part Status: Active |
auf Bestellung 44814 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LDV-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K |
auf Bestellung 3309 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LDV-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W Mounting: SMD Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 25A On-state resistance: 32mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMT3020LDV-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W Mounting: SMD Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 25A On-state resistance: 32mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |