Produktrezensionen
Produktbewertung abgeben
Technische Details DMT3020LFDB-13 Diodes Zetex
Description: MOSFET 2N-CH 30V 7.7A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMT3020LFDB-13 nach Preis ab 0.35 EUR bis 0.35 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
 |
DMT3020LFDB-13 | Diodes Incorporated |
 Description: MOSFET 2N-CH 30V 7.7A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMT3020LFDB-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.35 EUR |