DMT3020LFDBQ-13 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 2+ | 1.51 EUR |
| 10+ | 1.01 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.84 EUR |
| 10000+ | 0.33 EUR |
| 20000+ | 0.27 EUR |
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Technische Details DMT3020LFDBQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.7A 6UDFN, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: U-DFN2020-6 (Type B), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 700mW, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMT3020LFDBQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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DMT3020LFDBQ-13 | Diodes Incorporated |
 Description: MOSFET 2N-CH 30V 7.7A 6UDFNQualification: AEC-Q101 Grade: Automotive Supplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMT3020LFDBQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 32mΩ Power dissipation: 1.8W Drain current: 6.2A Drain-source voltage: 30V Pulsed drain current: 50A Kind of package: 13 inch reel; tape Application: automotive industry Case: U-DFN2020-6 Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMT3020LFDBQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.7A 6UDFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 7.7A 6UDFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMT3020LFDBQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH