DMT3020LFDBQ-13 Diodes Incorporated
auf Bestellung 9500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.93 EUR |
10+ | 0.73 EUR |
100+ | 0.56 EUR |
500+ | 0.47 EUR |
1000+ | 0.36 EUR |
10000+ | 0.3 EUR |
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Technische Details DMT3020LFDBQ-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W, Mounting: SMD, Power dissipation: 1.8W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 7nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 50A, Case: U-DFN2020-6, Drain-source voltage: 30V, Drain current: 6.2A, On-state resistance: 32mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote DMT3020LFDBQ-13
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DMT3020LFDBQ-13 | Hersteller : Diodes Inc | Dual N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
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DMT3020LFDBQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMT3020LFDBQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |