DMT3020LSDQ-13 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 2+ | 1.41 EUR |
| 10+ | 0.88 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.4 EUR |
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Technische Details DMT3020LSDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 16A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote DMT3020LSDQ-13 nach Preis ab 0.4 EUR bis 1.41 EUR
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DMT3020LSDQ-13 | Diodes Incorporated |
 Description: MOSFET 2N-CH 30V 16A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 2037 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LSDQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 16A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 16A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2037 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.41 EUR |
| 21+ | 0.88 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.4 EUR |