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DMT32M6LDG-7

DMT32M6LDG-7 Diodes Incorporated

DMT32M6LDG.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 21A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 400µA
Supplier Device Package: PowerDI3333-8 (Type G)
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+1 EUR
6000+ 0.96 EUR
Mindestbestellmenge: 2000
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Technische Details DMT32M6LDG-7 Diodes Incorporated

Description: MOSFET 2N-CH 30V 21A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V, Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 400µA, Supplier Device Package: PowerDI3333-8 (Type G), Part Status: Active.

Weitere Produktangebote DMT32M6LDG-7 nach Preis ab 1.07 EUR bis 2.43 EUR

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DMT32M6LDG-7 DMT32M6LDG-7 Hersteller : Diodes Incorporated DMT32M6LDG.pdf Description: MOSFET 2N-CH 30V 21A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 400µA
Supplier Device Package: PowerDI3333-8 (Type G)
Part Status: Active
auf Bestellung 7990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.43 EUR
10+ 1.99 EUR
100+ 1.54 EUR
500+ 1.31 EUR
1000+ 1.07 EUR
Mindestbestellmenge: 8
DMT32M6LDG-7 Hersteller : Diodes Incorporated DMT32M6LDG-3103748.pdf MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 2K
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