DMT32M6LDG-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 21A PWRDI3333
Part Status: Active
Supplier Device Package: PowerDI3333-8 (Type G)
Vgs(th) (Max) @ Id: 2.2V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT32M6LDG-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 21A PWRDI3333, Part Status: Active, Supplier Device Package: PowerDI3333-8 (Type G), Vgs(th) (Max) @ Id: 2.2V @ 400µA, Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 1.1W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMT32M6LDG-7 nach Preis ab 1.03 EUR bis 2.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMT32M6LDG-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 21A PWRDI3333 Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: PowerDI3333-8 (Type G) Vgs(th) (Max) @ Id: 2.2V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V |
auf Bestellung 3990 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMT32M6LDG-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 21A PWRDI3333
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerDI3333-8 (Type G)
Vgs(th) (Max) @ Id: 2.2V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Description: MOSFET 2N-CH 30V 21A PWRDI3333
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerDI3333-8 (Type G)
Vgs(th) (Max) @ Id: 2.2V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
auf Bestellung 3990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.59 EUR |
| 10+ | 1.99 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1.03 EUR |