DMT34M2LPS-13 Diodes Incorporated

Description: MOSFET BVDSS: 25V 30V POWERDI506, Drain to Source Voltage (Vdss): 30 V, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Input Capacitance (Ciss) (Max) @ Vds: 2242 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.2W (Ta), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).