DMT35M4LFDF-7 Diodes Incorporated
auf Bestellung 9812 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.88 EUR |
| 10+ | 0.61 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT35M4LFDF-7 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V U-DFN2020-, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 860mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V.
Weitere Produktangebote DMT35M4LFDF-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
DMT35M4LFDF-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET BVDSS: 25V~30V U-DFN2020-Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V |
auf Bestellung 67024 Stücke: Lieferzeit 10-14 Tag (e) |
|
|
|
DMT35M4LFDF-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V |
auf Bestellung 66000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMT35M4LFDF-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.7W Polarisation: unipolar Gate charge: 14.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 11A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| DMT35M4LFDF-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.7W Polarisation: unipolar Gate charge: 14.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 11A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |