DMT35M4LFVW-7 Diodes Incorporated
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.13 EUR |
| 10+ | 0.79 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.48 EUR |
| 2000+ | 0.39 EUR |
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Technische Details DMT35M4LFVW-7 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 110A; 1.5W, Mounting: SMD, Kind of package: reel; tape, Power dissipation: 1.5W, Polarisation: unipolar, Gate charge: 16.1nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 110A, Case: PowerDI®3333-8, Drain-source voltage: 30V, Drain current: 13A, On-state resistance: 9mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DMT35M4LFVW-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMT35M4LFVW-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 110A; 1.5W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.5W Polarisation: unipolar Gate charge: 16.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Case: PowerDI®3333-8 Drain-source voltage: 30V Drain current: 13A On-state resistance: 9mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMT35M4LFVW-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 110A; 1.5W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.5W Polarisation: unipolar Gate charge: 16.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Case: PowerDI®3333-8 Drain-source voltage: 30V Drain current: 13A On-state resistance: 9mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |