Produkte > DIODES INCORPORATED > DMT35M8LDG-13
DMT35M8LDG-13

DMT35M8LDG-13 Diodes Incorporated

DMT35M8LDG.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 17A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 980mW (Ta), 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type G)
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.66 EUR
6000+ 0.63 EUR
9000+ 0.6 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details DMT35M8LDG-13 Diodes Incorporated

Description: MOSFET 2N-CH 30V 17A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 980mW (Ta), 2W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V, Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V, Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type G).

Weitere Produktangebote DMT35M8LDG-13

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMT35M8LDG-13 Hersteller : Diodes Incorporated DMT35M8LDG-3240568.pdf MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K
Produkt ist nicht verfügbar