DMT36M4LDT-7A Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V V-DFN3030-, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.04W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 14.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1092pF @ 15V, 1644pF @ 15V, Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V, 6.4mOhm @ 16A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 23.3nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN3030-8 (Type K).