| Anzahl | Preis |
|---|---|
| 2+ | 2.45 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.47 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.04 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT4003SCT Diodes Incorporated
Description: MOSFET N-CH 40V 205A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 6865 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 75.6 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 156W, Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 205A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote DMT4003SCT nach Preis ab 2.34 EUR bis 2.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||
|---|---|---|---|---|---|---|---|---|---|
 |
DMT4003SCT | Diodes Incorporated |
 Description: MOSFET N-CH 40V 205A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 6865 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 75.6 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 156W Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 205A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMT4003SCT |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 205A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6865 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 75.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 40V 205A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6865 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 75.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.62 EUR |
| 10+ | 2.34 EUR |