DMT4004LPS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 40V 26A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.6W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 72500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.76 EUR |
| 5000+ | 0.72 EUR |
| 12500+ | 0.69 EUR |
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Technische Details DMT4004LPS-13 Diodes Incorporated
Description: MOSFET N-CH 40V 26A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 90A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V, Power Dissipation (Max): 2.6W (Ta), 138W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMT4004LPS-13 nach Preis ab 0.78 EUR bis 1.83 EUR
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DMT4004LPS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40V |
auf Bestellung 1653 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4004LPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 26A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 2.6W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 74668 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT4004LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W Case: PowerDI5060-8 Kind of package: reel; tape Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar On-state resistance: 4mΩ Drain current: 21A Drain-source voltage: 40V Gate charge: 82.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT4004LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W Case: PowerDI5060-8 Kind of package: reel; tape Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar On-state resistance: 4mΩ Drain current: 21A Drain-source voltage: 40V Gate charge: 82.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A |
Produkt ist nicht verfügbar |