DMT4008LFV-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 40V
Drain current: 9.7A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 40V
Drain current: 9.7A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
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Technische Details DMT4008LFV-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W, Power dissipation: 1.9W, Polarisation: unipolar, Kind of package: 13 inch reel; tape, Gate charge: 17.1nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 70A, Mounting: SMD, Case: PowerDI3333-8, Drain-source voltage: 40V, Drain current: 9.7A, On-state resistance: 12mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote DMT4008LFV-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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DMT4008LFV-13 | Hersteller : Diodes Incorporated |
 MOSFET MOSFET BVDSS: 31V-40V |
Produkt ist nicht verfügbar |
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| DMT4008LFV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W Power dissipation: 1.9W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 17.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 70A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 40V Drain current: 9.7A On-state resistance: 12mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |