Technische Details DMT4008LFV-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W, On-state resistance: 12mΩ, Power dissipation: 1.9W, Gate-source voltage: ±20V, Kind of package: 13 inch reel; tape, Kind of channel: enhancement, Type of transistor: N-MOSFET, Case: PowerDI3333-8, Mounting: SMD, Polarisation: unipolar, Pulsed drain current: 70A, Drain current: 9.7A, Drain-source voltage: 40V, Gate charge: 17.1nC.
Weitere Produktangebote DMT4008LFV-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMT4008LFV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W On-state resistance: 12mΩ Power dissipation: 1.9W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerDI3333-8 Mounting: SMD Polarisation: unipolar Pulsed drain current: 70A Drain current: 9.7A Drain-source voltage: 40V Gate charge: 17.1nC |
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