DMT47M2LDVQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 7+ | 2.69 EUR |
| 11+ | 1.71 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.82 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT47M2LDVQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.9A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.34W (Ta), 14.8W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V, Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXC), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMT47M2LDVQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
DMT47M2LDVQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 40V 11.9A Automotive AEC-Q101 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
|
|
|
DMT47M2LDVQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 40V 11.9A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.34W (Ta), 14.8W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|
 |
DMT47M2LDVQ-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V 40V PowerDI3333-8 T&R 3K |
Produkt ist nicht verfügbar |