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DMT47M2LDVQ-7

DMT47M2LDVQ-7 Diodes Incorporated

DMT47M2LDVQ.pdf
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V 40V PowerDI3333-8 T&R 2K
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.62 EUR
10+1.66 EUR
100+1.1 EUR
500+0.87 EUR
1000+0.8 EUR
2000+0.72 EUR
Mindestbestellmenge: 2
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Technische Details DMT47M2LDVQ-7 Diodes Incorporated

Description: MOSFET 2N-CH 40V 11.9A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.34W (Ta), 14.8W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V, Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXC), Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMT47M2LDVQ-7 nach Preis ab 1.14 EUR bis 2.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMT47M2LDVQ-7 DMT47M2LDVQ-7 Hersteller : Diodes Incorporated DMT47M2LDVQ.pdf Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 255 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
11+1.71 EUR
100+1.14 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DMT47M2LDVQ-7 DMT47M2LDVQ-7 Hersteller : Diodes Zetex dmt47m2ldvq.pdf Trans MOSFET N-CH 40V 11.9A Automotive AEC-Q101 8-Pin PowerDI EP T/R
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DMT47M2LDVQ-7 DMT47M2LDVQ-7 Hersteller : Diodes Incorporated DMT47M2LDVQ.pdf Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
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DMT47M2LDVQ-7 Hersteller : DIODES INCORPORATED DMT47M2LDVQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.5A; Idm: 120A; 2.34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.5A
Pulsed drain current: 120A
Power dissipation: 2.34W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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