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DMT47M2LDVQ-7

DMT47M2LDVQ-7 Diodes Incorporated

DIOD_S_A0008363738_1-2543027.pdf Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8 T&R 2K
auf Bestellung 2901 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.80 EUR
10+1.48 EUR
100+1.15 EUR
500+0.97 EUR
1000+0.79 EUR
2000+0.75 EUR
4000+0.73 EUR
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Technische Details DMT47M2LDVQ-7 Diodes Incorporated

Description: MOSFET 2N-CH 40V 11.9A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.34W (Ta), 14.8W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V, Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXC), Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMT47M2LDVQ-7 nach Preis ab 0.76 EUR bis 1.83 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMT47M2LDVQ-7 Hersteller : Diodes Incorporated DMT47M2LDVQ.pdf Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.76 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
DMT47M2LDVQ-7 Hersteller : Diodes Incorporated DMT47M2LDVQ.pdf Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
12+1.50 EUR
100+1.17 EUR
500+0.99 EUR
1000+0.81 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
DMT47M2LDVQ-7 Hersteller : DIODES INCORPORATED DMT47M2LDVQ.pdf DMT47M2LDVQ-7 SMD N channel transistors
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