DMT47M2LDVQ-7 Diodes Incorporated
auf Bestellung 2901 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.8 EUR |
| 10+ | 1.48 EUR |
| 100+ | 1.15 EUR |
| 500+ | 0.97 EUR |
| 1000+ | 0.79 EUR |
| 2000+ | 0.75 EUR |
| 4000+ | 0.73 EUR |
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Technische Details DMT47M2LDVQ-7 Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.9A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.34W (Ta), 14.8W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V, Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXC), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMT47M2LDVQ-7 nach Preis ab 0.76 EUR bis 1.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMT47M2LDVQ-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 40V 11.9A PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.34W (Ta), 14.8W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT47M2LDVQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 40V 11.9A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.34W (Ta), 14.8W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT47M2LDVQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.5A; Idm: 120A; 2.34W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 120A Power dissipation: 2.34W Gate charge: 14nC Polarisation: unipolar Drain current: 9.5A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET On-state resistance: 15mΩ Gate-source voltage: ±20V Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMT47M2LDVQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.5A; Idm: 120A; 2.34W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 120A Power dissipation: 2.34W Gate charge: 14nC Polarisation: unipolar Drain current: 9.5A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET On-state resistance: 15mΩ Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |